Proc. 9-UFPS, Lithuanian Journal of Physics 35, 404 (1995)
F. Prengel, A. Wacker, G. Schwarz, and E. Schöll
Institut für Theoretische Physik, Technische Universität
Berlin,
Hardenbergstrasse 36, 10623 Berlin, Germany
J. Kastrup and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik,
Hausvogteiplatz 5-7, 10117 Berlin, Germany
The dynamics of field domain formation in n-doped semiconductor superlattices is studied by means of a phenomenological one-dimensional rate equation model for vertical transport. Dynamical simulations for the switching of the applied voltage from 0 into the domain regime show that two formation mechanisms can be found: the formation of the domain boundary in place in the NDC regime of the drift velocity vs field characteristic, and well-to-well hopping starting from the cathode in the bias regime of positive differential conductivity. The simulations are in good agreement with experimental results. Calculations for different barrier width show that the formation times become shorter for thinner barriers.
last update: Sep 27, 1995