Proc. 23rd Int. Conf. on the Physics of Semiconductors,
Berlin 1996, edited by M. Scheffler
and R. Zimmermann (World Scientific, Singapore
1996) vol. 3, pp. 1667-1670.
We analyze the bifurcation scenarios and phase diagrams of weakly coupled superlattices and demonstrate how the different regimes are influenced by structural disorder, e.g. doping fluctuations. Furthermore, we show that the dynamics of field domains upon voltage turn-on is governed by the creation and subsequent well-to-well propagation of a charge accumulation layer in the superlattice, which manifests itself by the occurrence of current spikes.
Poster